STGW80H65DFB

SKU: STGW80H65DFB

BRAND: ST


IGBT 650V 120A 469W TO247

Features

  • Maximum junction temperature: TJ = 175 °C
  • High speed switching series
  • Minimized tail current
  • Very low saturation voltage: VCE(sat) = 1.6 V (typ.) @ IC= 80 A
  • Tight parameters distribution
  • Safe paralleling
  • Low thermal resistance
  • Very fast soft recovery antiparallel diode
  • Lead free package

Downloads

Additional Information

Device Transistor