IRF830

SKU: IRF830

BRAND: Communica


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Delivery time: 2-5 working days for South Africa
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Free shipping for orders over R1,000.00
SIP MOS N-Channel 500V 4,5A TO220

N - Channel PowerMOS Transistor

Specifications

  • Maximum Power Dissipation: 100 W
  • Maximum Drain-Source Voltage: 500 V
  • Maximum Gate-Source Voltage: 20 V
  • Maximum Drain Current: 4.5 A
  • Maximum Junction Temperature: 150 °C

Electrical Characteristics

  • Maximum Gate-Threshold Voltage: 4 V
  • Total Gate Charge: 22 nC
  • Rise Time: 8 nS
  • Output Capacitance: 120 pF
  • Maximum Drain-Source On-State Resistance: 1.5 Ohm
  • Package: TO220

Additional Information

Device Transistor
Discover the IRF830 N-Channel MOSFET, designed for high-efficiency performance with a maximum power dissipation of 100W and a drain-source voltage of 500V. This reliable TO220 transistor ensures optimal thermal management and fast switching times, making it perfect for your power applications. Upgrade your projects with this robust component that delivers exceptional reliability and efficiency.

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