SIP MOS N-Channel 500V 4,5A TO220
N - Channel PowerMOS Transistor
Specifications
- Maximum Power Dissipation: 100 W
- Maximum Drain-Source Voltage: 500 V
- Maximum Gate-Source Voltage: 20 V
- Maximum Drain Current: 4.5 A
- Maximum Junction Temperature: 150 °C
Electrical Characteristics
- Maximum Gate-Threshold Voltage: 4 V
- Total Gate Charge: 22 nC
- Rise Time: 8 nS
- Output Capacitance: 120 pF
- Maximum Drain-Source On-State Resistance: 1.5 Ohm
- Package: TO220
Additional Information
Discover the IRF830 N-Channel MOSFET, designed for high-efficiency performance with a maximum power dissipation of 100W and a drain-source voltage of 500V. This reliable TO220 transistor ensures optimal thermal management and fast switching times, making it perfect for your power applications. Upgrade your projects with this robust component that delivers exceptional reliability and efficiency.