N 250V 16A 15/60 250W TO-3
NPN Silicon Power Transistor
Specifications
- Material of Transistor: Si
- Polarity: NPN
- Maximum Collector Power Dissipation (Pc): 250 W
- Maximum Collector-Base Voltage |Vcb|: 400 V
- Maximum Collector-Emitter Voltage |Vce|: 210 V
- Maximum Emitter-Base Voltage |Veb|: 7 V
- Maximum Collector Current |Ic max|: 16 A
- Max. Operating Junction Temperature (Tj): 200 °C
Electrical Characteristics
- Transition Frequency (ft): 4 MHz
- Collector Capacitance (Cc): 500 pF
- Forward Current Transfer Ratio (hFE), MIN: 15
- Package: TO3
Additional Information
Upgrade your projects with the MJ15024 NPN Silicon Power Transistor, featuring robust performance with 250W power dissipation and a 16A collector current. Ideal for high-efficiency applications, this reliable component ensures optimal operation up to 200°C, making it perfect for your electronic needs.