SIHG80N60EF-GE3

Name: SIHG80N60EF-GE3 - Communica [Part No: SIHG80N60EF-GE3]
Brand: Vishay
SKU: SIHG80N60EF-GE3
Price: 95 ZAR
Availability: OutOfStock

SKU: SIHG80N60EF-GE3

BRAND: Vishay

Sold Out
R 109.25_{(inc VAT)}
R 95.00_{(ex VAT)}

Collections: Semiconductors

Type: Transistors

Category: N Channel Mosfet Transistor

N-CH MOSFET 600V 80A Rds On (Max) 32mΩ TO247AC

N-CH MOSFET 600V 80A Rds

Specifications

FET Type	N-Channel
Technology	MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)	600 V
Current - Continuous Drain (Id) @ 25°C	80A (Tc)
Drive Voltage (Max Rds On, Min Rds On)	10V
Rds On (Max) @ Id, Vgs	32mOhm @ 40A, 10V
Vgs(th) (Max) @ Id	4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs	400 nC @ 10 V
Vgs (Max)	±30V
Input Capacitance (Ciss) (Max) @ Vds	6600 pF @ 100 V
Power Dissipation (Max)	520W (Tc)
Operating Temperature	-55°C ~ 150°C (TJ)
Mounting Type	Through Hole
Supplier Device Package	TO-247AC
Package / Case	TO-247-3

Downloads

Datasheet - SIHG80N60EF-GE3

Additional Information

Device	MOSFET
Type	N-CH \| 600V \| 80A \| Rds