NPN Silicon Bipolar Junction Transistor
NPN Silicon Bipolar Junction Transistor
Specifications
- Material of Transistor: Si
- Polarity: NPN
- Maximum Collector Power Dissipation (Pc): 0.5 W
- Maximum Collector-Base Voltage |Vcb|: 100 V
- Maximum Collector-Emitter Voltage |Vce|: 60 V
- Maximum Emitter-Base Voltage |Veb|: 7 V
- Maximum Collector Current |Ic max|: 0.2 A
- Max. Operating Junction Temperature (Tj): 175 °C
Electrical Characteristics
- Transition Frequency (ft): 60 MHz
- Collector Capacitance (Cc): 15 pF
- Forward Current Transfer Ratio (hFE), MIN: 75
- Noise Figure, dB: -
- Package: TO18
Additional Information
Discover the 2N910 NPN Silicon Bipolar Junction Transistor, engineered for reliability and performance. With a maximum collector current of 0.2 A and a transition frequency of 60 MHz, it's perfect for your electronic projects. Enhance your circuitry with superior reliability and efficiency, making it an essential component for both hobbyists and professionals.