SI-P 60V 0.2A 0.5W 200MHz
Specifications
- Type: PNP
- Collector-Emitter Voltage, max: -50 V
- Collector-Base Voltage, max: -60 V
- Emitter-Base Voltage, max: -6 V
- Collector Current − Continuous, max: -0.2 A
- Collector Dissipation: 0.5 W
- DC Current Gain (hfe): 100 to 560
- Transition Frequency, min: 200 MHz
- Operating and Storage Junction Temperature Range: -55 to +150 °C
- Package: TO-92
Additional Information
| Frequency Response |
200MHz |
| Import Data |
SI-P 60V 0.2A 0.5W 200MHz |
| Keywords |
BJT |
| Device |
Transistor |
| Type |
Bipolar Junction |
Discover the 2SA1318 PNP transistor, designed for optimal performance in high-frequency applications up to 200MHz. With a maximum collector current of 0.2A and exceptional DC current gain, this reliable component ensures efficient operation and longevity in your electronic projects. Upgrade your circuitry with the power of the 2SA1318 today!