2SB536

SKU: 2SB536

BRAND: Communica


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Delivery time: 2-5 working days for South Africa
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P 140V 1,5A TO220

P 140V 1,5A TO220

Specifications

Type Designator: 2SB536
Material of Transistor: Si
Polarity: PNP
Maximum Collector Power Dissipation (Pc): 18 W
Maximum Collector-Base Voltage |Vcb|: 120 V
Maximum Collector-Emitter Voltage |Vce|: 110 V
Maximum Emitter-Base Voltage |Veb|: 6 V
Maximum Collector Current |Ic max|: 2 A
Max. Operating Junction Temperature (Tj): 175 °C
Transition Frequency (ft): 30 MHz
Forward Current Transfer Ratio (hFE), MIN: 40
Noise Figure, dB: –
Package: TO220

Additional Information

Frequency Response 40MHz
Import Data SI-P 130V 1.5A 20W 40MHz
Keywords BJT
Device Transistor
Type Bipolar Junction
The 2SB536 PNP transistor is your ideal solution for high-performance applications, offering a robust collector power dissipation of 18W and a maximum current of 2A. With a transition frequency of 30MHz, it ensures efficient signal amplification and reliability, making it perfect for your electronic projects. Upgrade your designs with this reliable bipolar junction transistor that operates smoothly up to 175°C.

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