Transistor Silicon PNP
Transistor Silicon PNP
Specifications
- Maximum Collector Power Dissipation (Pc): 0.9 W
- Maximum Collector-Base Voltage |Vcb|: 20 V
- Maximum Collector-Emitter Voltage |Vce|: 16 V
- Maximum Emitter-Base Voltage |Veb|: 6 V
- Maximum Collector Current |Ic max|: 2 A
- Max. Operating Junction Temperature (Tj): 150 °C
Electrical Characteristics
- Transition Frequency (ft): 40 MHz
- Collector Capacitance (Cc): 50 pF
- Forward Current Transfer Ratio (hFE), MIN: 100
Additional Information
Unlock your project’s potential with the 2SB738 Silicon PNP Transistor. With a maximum collector current of 2 A and a transition frequency of 40 MHz, this reliable component ensures optimal performance and efficiency in your electronic applications. Ideal for enhancing circuit stability, it operates at high temperatures up to 150 °C, making it a perfect choice for demanding environments. Elevate your designs with the 2SB738 today!