P 100V 6A 60W 13MHZ
P 100V 6A 60W 13MHZ
Specifications
- Type: PNP
- Collector-Emitter Voltage, max: -85 V
- Collector-Base Voltage, max: -100 V
- Emitter-Base Voltage, max: -6 V
- Collector Current − Continuous, max: -6 A
- Collector Dissipation: 60 W
- DC Current Gain (hfe): 60 to 200
- Transition Frequency, min: 18 MHz
- Operating and Storage Junction Temperature Range: -45 to +150 °C
- Package: TO-3P
Additional Information
| Frequency Response |
13MHz |
| Import Data |
SI-P 100V 6A 60W 13MHz |
| Keywords |
BJT |
| Device |
Transistor |
| Type |
Bipolar Junction |
| Polarity |
PNP |
| Material |
Silicon |
| Power Dissipation |
60A |
Discover the 2SB775 PNP transistor, engineered for superior performance with a collector current of up to 6A and power dissipation of 60W. Ideal for high-frequency applications, it operates efficiently at 13MHz, ensuring reliability in your electronic projects. Upgrade your circuit designs with this robust silicon transistor, perfect for enhancing your device's performance and longevity.