2SB775

SKU: 2SB775

BRAND: Communica


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Delivery time: 2-5 working days for South Africa
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P 100V 6A 60W 13MHZ

P 100V 6A 60W 13MHZ

Specifications

  • Type: PNP
  • Collector-Emitter Voltage, max: -85 V
  • Collector-Base Voltage, max: -100 V
  • Emitter-Base Voltage, max: -6 V
  • Collector Current − Continuous, max: -6 A
  • Collector Dissipation: 60 W
  • DC Current Gain (hfe): 60 to 200
  • Transition Frequency, min: 18 MHz
  • Operating and Storage Junction Temperature Range: -45 to +150 °C
  • Package: TO-3P

Additional Information

Frequency Response 13MHz
Import Data SI-P 100V 6A 60W 13MHz
Keywords BJT
Device Transistor
Type Bipolar Junction
Polarity PNP
Material Silicon
Power Dissipation 60A
Discover the 2SB775 PNP transistor, engineered for superior performance with a collector current of up to 6A and power dissipation of 60W. Ideal for high-frequency applications, it operates efficiently at 13MHz, ensuring reliability in your electronic projects. Upgrade your circuit designs with this robust silicon transistor, perfect for enhancing your device's performance and longevity.

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