P 160V 12A TO3PN
P 160V 12A TO3PN
Specifications
- Type: PNP
- Collector-Emitter Voltage, max: -140 V
- Collector-Base Voltage, max: -160 V
- Emitter-Base Voltage, max: -6 V
- Collector Current − Continuous, max: -12 A
- Collector Dissipation: 100 W
- DC Current Gain (hfe): 60 to 200
- Transition Frequency, min: 15 MHz
- Operating and Storage Junction Temperature Range: -40 to +150 °C
- Package: TO-3P
Additional Information
| Import Data |
SI-P 160V 12A 100W |
| Keywords |
BJT |
| Device |
Transistor |
| Type |
Bipolar Junction |
Discover the powerful 2SB817 PNP transistor, designed for high-performance applications with a collector-emitter voltage of 160V and a continuous collector current of 12A. Its robust construction ensures reliable operation in extreme temperatures, making it ideal for demanding electronic projects. Upgrade your circuit's efficiency with this versatile BJT component, perfect for both hobbyists and professionals.