2SB817

SKU: 2SB817

BRAND: Communica


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Delivery time: 2-5 working days for South Africa
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P 160V 12A TO3PN

P 160V 12A TO3PN

Specifications

  • Type: PNP
  • Collector-Emitter Voltage, max: -140 V
  • Collector-Base Voltage, max: -160 V
  • Emitter-Base Voltage, max: -6 V
  • Collector Current − Continuous, max: -12 A
  • Collector Dissipation: 100 W
  • DC Current Gain (hfe): 60 to 200
  • Transition Frequency, min: 15 MHz
  • Operating and Storage Junction Temperature Range: -40 to +150 °C
  • Package: TO-3P

Additional Information

Import Data SI-P 160V 12A 100W
Keywords BJT
Device Transistor
Type Bipolar Junction
Discover the powerful 2SB817 PNP transistor, designed for high-performance applications with a collector-emitter voltage of 160V and a continuous collector current of 12A. Its robust construction ensures reliable operation in extreme temperatures, making it ideal for demanding electronic projects. Upgrade your circuit's efficiency with this versatile BJT component, perfect for both hobbyists and professionals.

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