PNP Darlington Transistor
PNP Darlington Transistor
Specifications
- Maximum Collector Power Dissipation (Pc): 40 W
- Maximum Collector-Base Voltage |Vcb|: 60 V
- Maximum Collector-Emitter Voltage |Vce|: 60 V
- Maximum Emitter-Base Voltage |Veb|: 5 V
- Maximum Collector Current |Ic max|: 4 A
- Max. Operating Junction Temperature (Tj): 175 °C
Electrical Characteristics
- Transition Frequency (ft): 7.5 MHz
- Forward Current Transfer Ratio (hFE), MIN: 60
Additional Information
| CatGroup |
Transistor |
| Device |
Transistor |
Upgrade your projects with the 2SB858 PNP Darlington Transistor, offering reliable performance with a maximum power dissipation of 40W and a collector current of 4A. Perfect for high-frequency applications, this transistor ensures efficient operation at temperatures up to 175°C, making it an essential component for your electronic needs.