SI-P 40V 2A 5W 100MHz
Specifications
- Type Designator: 2SB891
- Material of Transistor: Si
- Polarity: PNP
- Maximum Collector Power Dissipation (Pc): 5 W
- Maximum Collector-Base Voltage |Vcb|: 40 V
- Maximum Collector-Emitter Voltage |Vce|: 40 V
- Maximum Emitter-Base Voltage |Veb|: 6 V
- Maximum Collector Current |Ic max|: 2 A
- Operating Junction Temperature (Tj): 150 °C
- Transition Frequency (ft): 50 MHz
- Forward Current Transfer Ratio (hFE), MIN: 120
- Noise Figure, dB: -
- Package: TO126
Additional Information
| Frequency Response |
100MHz |
| Import Data |
SI-P 40V 2A 5W 100MHz |
| Keywords |
BJT |
| Device |
Transistor |
| Type |
Bipolar Junction |
| Polarity |
PNP |
| Material |
Silicon |
| Power Dissipation |
5A |
Elevate your electronic projects with the 2SB891 PNP Bipolar Junction Transistor. With a robust power dissipation of 5W and a frequency response of 100MHz, this silicon transistor ensures reliable performance and stability in your circuits. Ideal for high-efficiency applications, it supports up to 2A collector current, making it a valuable addition to any engineer's toolkit.