2SB891

SKU: 2SB891

BRAND: Communica


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Delivery time: 2-5 working days for South Africa
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SI-P 40V 2A 5W 100MHz

Specifications

  • Type Designator: 2SB891
  • Material of Transistor: Si
  • Polarity: PNP
  • Maximum Collector Power Dissipation (Pc): 5 W
  • Maximum Collector-Base Voltage |Vcb|: 40 V
  • Maximum Collector-Emitter Voltage |Vce|: 40 V
  • Maximum Emitter-Base Voltage |Veb|: 6 V
  • Maximum Collector Current |Ic max|: 2 A
  • Operating Junction Temperature (Tj): 150 °C
  • Transition Frequency (ft): 50 MHz
  • Forward Current Transfer Ratio (hFE), MIN: 120
  • Noise Figure, dB: -
  • Package: TO126

Additional Information

Frequency Response 100MHz
Import Data SI-P 40V 2A 5W 100MHz
Keywords BJT
Device Transistor
Type Bipolar Junction
Polarity PNP
Material Silicon
Power Dissipation 5A
Elevate your electronic projects with the 2SB891 PNP Bipolar Junction Transistor. With a robust power dissipation of 5W and a frequency response of 100MHz, this silicon transistor ensures reliable performance and stability in your circuits. Ideal for high-efficiency applications, it supports up to 2A collector current, making it a valuable addition to any engineer's toolkit.

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