2SB940

SKU: 2SB940

BRAND: Communica


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Delivery time: 2-5 working days for South Africa
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SI-P 200V 2A 35W 30MHz

Transistor Silicon PNP

Specifications

Case SOT186
Vbr CBO 200
Vbr CEO 150
Max. PD (W) 30
Derate (Amb) (W/°C) 240m
Max. hFE 260
Min hFE 60
Ic Max. (A) 2.0
@Ic (test) (A) 150m
Icbo Max. @Vcb Max. (A) 50u
Polarity PNP
Oper. Temp (°C) Max. 140
@VCE (V) 10
Pinout Equivalence Number 3-15
Surface Mounted Yes/No NO
Maximum Collector Power Dissipation (Pc) 30 W
Maximum Collector-Base Voltage |Vcb| 200 V
Maximum Collector-Emitter Voltage |Vce| 180 V
Maximum Emitter-Base Voltage |Veb| 6 V
Maximum Collector Current |Ic max| 2 A
Max. Operating Junction Temperature (Tj) 150 °C
Forward Current Transfer Ratio (hFE), MIN 100

Additional Information

Device Transistor
Discover the reliable 2SB940 PNP transistor, designed for high-performance applications with a maximum collector current of 2A and power dissipation of 30W. With its robust specifications, including a voltage rating of 200V and optimal thermal stability, this transistor ensures efficient operation and longevity. Upgrade your electronic projects today with the dependable 2SB940, perfect for enhancing circuit performance.

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