SI-N 160V 1A 0.9W 100MHz TO92L Silicon Transistor.
Silicon Transistor
Specifications
Absolute Maximum Ratings (Ta=25°C)
- Collector Base Voltage : 160V
- Collector Emitter Voltage : 160V
- Emitter Base Voltage : 6V
- Collector Current Continuous : 1A
- Collector Power Dissipation : 0.75W
- Junction Temperature Range : -55°C to 150°C
- Storage Temperature Range : -55°C to 150°C
Electrical Characteristics (TA=25°C)
- Collector Base Breakdown Voltage : 160V
- Collector Emitter Breakdown Voltage : 160V
- Emitter Base Breakdown Voltage : 6V
- Collector Cut off Current : 1µA
- Collector Cut off Current : 10µA
- Emitter Cut off Current : 1µA
- Collector Emitter Saturation Voltage : 1V
- Base Emitter ON Voltage : 0.75V
- Transition Frequency : 20MHz
Downloads
Additional Information
| CatGroup |
Transistor |
| Frequency Response |
100MHz |
| Import Data |
SI-N 160V 1A 0.9W 100MHz |
| Keywords |
BJT |
| Device |
Transistor |
| Type |
Bipolar Junction |
| Polarity |
NPN |
| Material |
Silicon |
| Power Dissipation |
0.9A |
Discover the 2SC2383 Silicon Transistor, a reliable NPN BJT designed for high-frequency applications up to 100MHz. With impressive specifications, including 160V collector voltage and 1A collector current, it ensures optimal performance and efficiency for your electronic projects. Maximize your circuit's reliability with this durable and versatile component.