Silicon NPN Darlington Power Transistor
Silicon NPN Darlington Power Transistor
Specifications
- Maximum Collector Power Dissipation (Pc): 20 W
- Maximum Collector-Base Voltage |Vcb|: 120 V
- Maximum Collector-Emitter Voltage |Vce|: 120 V
- Maximum Emitter-Base Voltage |Veb|: 7 V
- Maximum Collector Current |Ic max|: 1.5 A
- Max. Operating Junction Temperature (Tj): 150 °C
Electrical Characteristics
- Forward Current Transfer Ratio (hFE), MIN: 15000
Additional Information
Upgrade your electronics with the 2SD1376 Silicon NPN Darlington Power Transistor. With a high current transfer ratio of 15,000 and robust voltage ratings, it ensures reliable performance and efficiency for your projects. Perfect for demanding applications, this transistor delivers exceptional power handling and thermal stability, making it an essential component for any electrical design.