SIP MOS N-CH 600V 6A 100W 1.25R TO220
Transistor N Channel MOSFET
Specifications
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Pd- Maximum Power Dissipation: 100 W
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|Vds|- Maximum Drain-Source Voltage: 600 V
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|Vgs|- Maximum Gate-Source Voltage: 20 V
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|Id| - Maximum Drain Current: 6 A
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Tj - Maximum Junction Temperature: 150 °C
Electrical Characteristics
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|VGSth|- Maximum Gate-Threshold Voltage: 3.5 V
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tr- Rise Time: 25 nS
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Coss - Output Capacitance: 250 pF
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RDSon - Maximum Drain-Source On-State Resistance: 0.95 Ohm
Downloads
Additional Information
Unlock superior performance with the 2SK1117 N-Channel MOSFET, featuring a robust 600V rating and 6A current capacity. Designed for high-efficiency applications, it ensures optimal power dissipation of 100W and minimal on-state resistance for reliable operation. Elevate your circuit design with this high-quality transistor, perfect for demanding electrical applications.