2SK1117

SKU: 2SK1117

BRAND: Communica


SIP MOS N-CH 600V 6A 100W 1.25R TO220

Transistor N Channel MOSFET

Specifications

  • Pd- Maximum Power Dissipation: 100 W
  • |Vds|- Maximum Drain-Source Voltage: 600 V
  • |Vgs|- Maximum Gate-Source Voltage: 20 V
  • |Id| - Maximum Drain Current: 6 A
  • Tj - Maximum Junction Temperature: 150 °C

Electrical Characteristics

  • |VGSth|- Maximum Gate-Threshold Voltage: 3.5 V
  • tr- Rise Time: 25 nS
  • Coss - Output Capacitance: 250 pF
  • RDSon - Maximum Drain-Source On-State Resistance: 0.95 Ohm

Downloads

Additional Information

Device Transistor
Unlock superior performance with the 2SK1117 N-Channel MOSFET, featuring a robust 600V rating and 6A current capacity. Designed for high-efficiency applications, it ensures optimal power dissipation of 100W and minimal on-state resistance for reliable operation. Elevate your circuit design with this high-quality transistor, perfect for demanding electrical applications.

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