2SK1213

SKU: 2SK1213

BRAND: Communica


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Delivery time: 2-5 working days for South Africa
In stock - Ready for immediate dispatch
Free shipping for orders over R1,000.00
SIP MOS N-CH 600V 6A 125W 1.25R TO3P

Specifications

  • Pd - Maximum Power Dissipation: 125 W
  • |Vds|- Maximum Drain-Source Voltage: 600 V
  • |Vgs|- Maximum Gate-Source Voltage: 20 V
  • |Id|- Maximum Drain Current: 6 A
  • Tj - Maximum Junction Temperature: 150 °C

Electrical Characteristics

  • |VGSth| - Maximum Gate-Threshold Voltage: 3.5 V
  • tr - Rise Time: 25 nS
  • RDSon - Maximum Drain-Source On-State Resistance: 1.25 Ohm
  • Package: TO3PN

Downloads

Additional Information

Device Transistor
Discover the 2SK1213 N-Channel MOSFET, designed for high-performance applications with a 600V, 6A capability. This robust transistor ensures efficient power dissipation up to 125W, making it ideal for demanding electronic circuits. Maximize your project’s reliability and efficiency with the 2SK1213.

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