SIP MOS N-CH 600V 6A 125W 1.25R TO3P
Specifications
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Pd - Maximum Power Dissipation: 125 W
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|Vds|- Maximum Drain-Source Voltage: 600 V
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|Vgs|- Maximum Gate-Source Voltage: 20 V
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|Id|- Maximum Drain Current: 6 A
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Tj - Maximum Junction Temperature: 150 °C
Electrical Characteristics
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|VGSth| - Maximum Gate-Threshold Voltage: 3.5 V
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tr - Rise Time: 25 nS
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RDSon - Maximum Drain-Source On-State Resistance: 1.25 Ohm
- Package: TO3PN
Downloads
Additional Information
Discover the 2SK1213 N-Channel MOSFET, designed for high-performance applications with a 600V, 6A capability. This robust transistor ensures efficient power dissipation up to 125W, making it ideal for demanding electronic circuits. Maximize your project’s reliability and efficiency with the 2SK1213.