Silicon NPN Power Transistor
Silicon NPN Power Transistor
Specifications
- Material type: Si
- Polarity: NPN
- Maximum power dissipation (Pc): 30 W
- Maximum permissible collector-base voltage (Ucb): 300 V
- Maximum allowable collector-emitter voltage (Uce): 150 V
Additional Information
Unlock high performance with the 3DD300 Silicon NPN Power Transistor, designed for superior power dissipation up to 30W. With a robust collector-base voltage of 300V and collector-emitter voltage of 150V, this reliable component ensures efficiency and durability for your electronic projects. Upgrade your applications today!