P-DARL 40V 0.4A 0.625W
Specifications
- Type Designator: BC516
- Material of Transistor: Si
- Polarity: PNP
- Maximum Collector Power Dissipation (Pc): 0.625 W
- Maximum Collector-Base Voltage |Vcb|: 40 V
- Maximum Collector-Emitter Voltage |Vce|: 30 V
- Maximum Emitter-Base Voltage |Veb|: 10 V
- Maximum Collector Current |Ic max|: 0.4 A
- Operating Junction Temperature (Tj): 150 °C
- Transition Frequency (ft): 150 MHz
- Collector Capacitance (Cc): 7 pF
- Forward Current Transfer Ratio (hFE), MIN: 30000
- Noise Figure, dB: -
- Package: TO92
Additional Information
| Device |
Transistor |
| Type |
Bipolar Junction |
| Highlights |
Darlington |
| Polarity |
PNP |
| Material |
Silicon |
| Power Dissipation |
0.625A |
Discover the BC516 PNP Darlington transistor, perfect for high-performance applications. With a maximum power dissipation of 0.625W and a collector current of 0.4A, this silicon component ensures reliability and efficiency. Upgrade your electronics with the BC516 for superior signal processing and stability.