P 45V 45V 4A 750MN TO126
P 45V 45V 4A 750MN TO126
Specifications
- Type Designator: BD676
- Material of Transistor: Si
- Polarity: PNP
- Maximum Collector Power Dissipation (Pc): 40 W
- Maximum Collector-Base Voltage |Vcb|: 45 V
- Maximum Collector-Emitter Voltage |Vce|: 45 V
- Maximum Emitter-Base Voltage |Veb|: 5 V
- Maximum Collector Current |Ic max|: 4 A
- Operating Junction Temperature (Tj): 150 °C
- Transition Frequency (ft): 1 MHz
- Forward Current Transfer Ratio (hFE), MIN: 750
- Noise Figure, dB: -
- Package: TO126
Additional Information
| Device |
Transistor |
| Type |
45V 45V 4A 750MN TO126 |
Upgrade your projects with the BD676 PNP Transistor, delivering robust performance with a maximum collector current of 4A and power dissipation up to 40W. Perfect for reliable circuit applications, it features a high forward current transfer ratio of 750 and operates efficiently at temperatures up to 150°C. Enhance your electronic designs with this reliable and powerful component today!