P 40V 40V 25MA 60MN X10
P 40V 40V 25MA 60MN X10
Specifications
- Type Designator: BF450
- Material of Transistor: Si
- Polarity: PNP
- Maximum Collector Power Dissipation (Pc): 0.15 W
- Maximum Collector-Base Voltage |Vcb|: 40 V
- Maximum Collector-Emitter Voltage |Vce|: 40 V
- Maximum Emitter-Base Voltage |Veb|: 4 V
- Maximum Collector Current |Ic max|: 0.025 A
- Operating Junction Temperature (Tj): 125 °C
- Transition Frequency (ft): 325 MHz
- Collector Capacitance (Cc): 0.7 pF
- Forward Current Transfer Ratio (hFE), MIN: 60
- Noise Figure, dB: -
- Package: TO92
Additional Information
| Frequency Response |
375MHz |
| Import Data |
SI-P 40V 25mA 375MHz .25W |
| Keywords |
BJT |
| Device |
Transistor |
| Type |
Bipolar Junction |
| Polarity |
PNP |
| Material |
Silicon |
| Power Dissipation |
0.25A |
The BF450 PNP transistor is a high-performance BJT designed for efficient circuit applications, offering a maximum collector current of 25mA and a frequency response of up to 375MHz. With its silicon material and robust power dissipation capabilities, this reliable transistor ensures optimal performance in your electronic projects. Upgrade your designs with the BF450 for superior reliability and efficiency.