P 300V 50MA 50MN TO126
P 300V 50MA 50MN TO126
Specifications
- Type Designator: BF472
- Material of Transistor: Si
- Polarity: PNP
- Maximum Collector Power Dissipation (Pc): 2 W
- Maximum Collector-Base Voltage |Vcb|: 300 V
- Maximum Emitter-Base Voltage |Veb|: 5 V
- Maximum Collector Current |Ic max|: 0.1 A
- Operating Junction Temperature (Tj): 150 °C
- Transition Frequency (ft): 60 MHz
- Collector Capacitance (Cc): 1.8 pF
- Forward Current Transfer Ratio (hFE), MIN: 50
- Noise Figure, dB: -
- Package: TO126
Additional Information
| Frequency Response |
60MHz |
| Import Data |
SI-P 300V 30mA 2W 60MHz |
| Keywords |
BJT |
| Device |
Transistor |
| Type |
Bipolar Junction |
| Polarity |
PNP |
| Material |
Silicon |
| Power Dissipation |
2A |
Discover the BF472 PNP Bipolar Junction Transistor, designed for high-efficiency performance with a maximum collector voltage of 300V and power dissipation of 2W. Its impressive 60MHz transition frequency and robust construction ensure reliable operation in various applications. Upgrade your electronics with this reliable and powerful silicon transistor for optimal circuit performance.