Si-P Dual-ra 60V 100ma 110Mhz TO-5
NPN Silicon Transistor
Features
- Material of Transistor: Si
- Polarity: PNP
- Maximum Collector Power Dissipation (Pc): 0.6 W
- Maximum Collector-Base Voltage |Vcb|: 60 V
- Maximum Collector-Emitter Voltage |Vce|: 60 V
- Maximum Emitter-Base Voltage |Veb|: 6 V
- Maximum Collector Current |Ic max|: 0.1 A
- Max. Operating Junction Temperature (Tj): 200 °C
Electrical Characteristics
- Transition Frequency (ft): 55 MHz
- Collector Capacitance (Cc): 5 pF
- Forward Current Transfer Ratio (hFE), MIN: 100
- Package: TO77
Additional Information
Elevate your electronics projects with the BFX36 PNP Silicon Transistor. Designed for high performance, it features a maximum collector power dissipation of 0.6W and a transition frequency of 55MHz, ensuring reliability in demanding applications. With robust voltage ratings and compact TO-5 packaging, the BFX36 delivers exceptional efficiency and durability for all your circuit needs.