SI-N 15V 50mA 0.2W 1.3GHz
Specifications
- Maximum Collector Power Dissipation (Pc): 0.2 W
- Maximum Collector-Base Voltage |Vcb|: 30 V
- Maximum Collector-Emitter Voltage |Vce|: 15 V
- Maximum Collector Current |Ic max|: 0.05 A
- Max. Operating Junction Temperature (Tj): 200 °C
Electrical Characteristics
- Transition Frequency (ft): 1100 MHz
- Forward Current Transfer Ratio (hFE), MIN: 25
- Package: TO72
Additional Information
Unlock superior performance with the BFX89 transistor, designed for efficiency with a maximum power dissipation of 0.2W and a transition frequency of 1.1GHz. Ideal for high-frequency applications, it ensures reliable operation at temperatures up to 200°C. Elevate your projects with this robust, high-quality component that delivers exceptional value and reliability.