N 400V 7A 10/150 TO3 Transistor
N 400V 7A 10/150 TO3 Transistor
Specifications
Absolute Maximum Ratings
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Collector-Base Voltage (VCBO): 400 V
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Collector-Emitter Voltage (VCEO): 150 V
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Emitter-Base Voltage (VEBO): 10 V
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Collector Current (IC): 7 A
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Peak Collector Current (ICM): 15 A
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Base Current (IB): 3 A
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Power Dissipation (PC): 85 W
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Junction Temperature (TJ): up to 200 °C
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Storage Temperature: −65 to +200 °C
Electrical Characteristics
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DC Current Gain (hFE): 10 – 50
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Collector-Emitter Saturation Voltage: ≈ 2.5 V (at IC = 7 A)
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Transition Frequency (fT): ~5–10 MHz
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Collector Cutoff Current (ICBO): ≤ 500 µA
General
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Polarity: NPN
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Material: Silicon
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Mounting: Through-hole
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Typical Application: Horizontal deflection/output stage in CRT TV circuits and other high-voltage switching applications.
Additional Information
| CatGroup |
Transistor |
| Device |
Transistor |
The BU104 NPN transistor delivers robust performance with a collector-emitter voltage of 150V and a collector current of 7A, making it ideal for high-voltage applications like CRT TVs. Its reliable power dissipation of 85W and wide temperature range ensure durability and efficiency, providing excellent value for your electronics projects. Upgrade your circuits with the BU104 for exceptional reliability and performance.