Si NPN Power BJT 1 MHz 10A 330V
Specifications
- Material of Transistor: Si
- Polarity: NPN
- Maximum Collector Power Dissipation (Pc): 60 W
- Maximum Collector-Base Voltage |Vcb|: 330 V
- Maximum Collector-Emitter Voltage |Vce|: 150 V
- Maximum Emitter-Base Voltage |Veb|: 6 V
- Maximum Collector Current |Ic max|: 10 A
- Max. Operating Junction Temperature (Tj): 115 °C
Electrical Characteristics
- Transition Frequency (ft): 15 MHz
- Forward Current Transfer Ratio (hFE), MIN: 8
- Package: TO3
Upgrade your projects with the BU110 NPN Power BJT, delivering reliable performance at 10A and 330V. With a 15 MHz transition frequency and robust design, it's perfect for high-efficiency applications. Enhance your circuit reliability and efficiency with this powerful transistor today!