N 130V 60V 5A 15MN TO5 Transistor
N 130V 60V 5A 15MN TO5 Transistor
Specifications
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Transistor type: NPN BJT
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Material: Silicon
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Package: TO-39 (metal can, 3-pin)
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Collector-Emitter Voltage (VCE): 150 V
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Collector-Base Voltage (VCB): 250 V
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Emitter-Base Voltage (VEB): 6 V
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Maximum Collector Current (IC): 3 A
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Collector Power Dissipation (PC): 1 W
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DC Current Gain (hFE): ≈ 30
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Transition Frequency (fT): 15 MHz
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Maximum Junction Temperature: 125 °C
Pin Configuration (TO-39 package)
- Emitter
- Base
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Collector (connected to the metal case in many versions)
Typical Applications
- Power switching circuits
- Voltage regulators
- Linear amplifiers
- Industrial control electronics
- Older TV and power supply circuits
Additional Information
| CatGroup |
Transistor |
| Device |
Transistor |
Discover the BU125S NPN BJT Transistor, a reliable choice for power switching circuits and voltage regulation. With a robust 150V collector-emitter voltage and 3A current capacity, it ensures efficient performance in industrial control electronics and older power supply systems. Upgrade your projects with this high-quality silicon transistor, designed for durability and optimal function.