BU125S

SKU: BU125S

BRAND: Communica


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Delivery time: 2-5 working days for South Africa
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N 130V 60V 5A 15MN TO5 Transistor

N 130V 60V 5A 15MN TO5 Transistor

Specifications

  • Transistor type: NPN BJT
  • Material: Silicon
  • Package: TO-39 (metal can, 3-pin)
  • Collector-Emitter Voltage (VCE): 150 V
  • Collector-Base Voltage (VCB): 250 V
  • Emitter-Base Voltage (VEB): 6 V
  • Maximum Collector Current (IC): 3 A
  • Collector Power Dissipation (PC): 1 W
  • DC Current Gain (hFE): ≈ 30
  • Transition Frequency (fT): 15 MHz
  • Maximum Junction Temperature: 125 °C

Pin Configuration (TO-39 package)

  • Emitter
  • Base
  • Collector (connected to the metal case in many versions)

Typical Applications

  • Power switching circuits
  • Voltage regulators
  • Linear amplifiers
  • Industrial control electronics
  • Older TV and power supply circuits

 

Additional Information

CatGroup Transistor
Device Transistor
Discover the BU125S NPN BJT Transistor, a reliable choice for power switching circuits and voltage regulation. With a robust 150V collector-emitter voltage and 3A current capacity, it ensures efficient performance in industrial control electronics and older power supply systems. Upgrade your projects with this high-quality silicon transistor, designed for durability and optimal function.

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