MOSFET - 75V 82A N-Channel HEXFET Power MOSFET TO-220
75V 82A N-Channel HEXFET Power MOSFET TO-220
Specifications
| Number of Channels |
1 Channel |
| Transistor Polarity |
N-Channel |
| Drain-Source Breakdown Voltage (Vds) |
75V |
| Continuous Drain Current (Id) |
82A |
| Drain-Source Resistance (Rds On) |
13mOhms |
| Gate-Source Voltage (Vgs) |
20V |
| Gate Charge (Qg) |
160 nC |
| Operating Temperature Range |
-55 - 175°C |
| Power Dissipation (Pd) |
230W |
Downloads
Additional Information
Unlock high-performance power management with the IRF2807 N-Channel MOSFET. With a robust 75V, 82A capacity and low resistance of just 13mOhms, it ensures efficient operation for your electronic projects. Designed for reliability across a wide temperature range, this MOSFET delivers superior power dissipation and stability, making it the ideal choice for your power applications.