IRF630

SKU: IRF630

BRAND: Communica


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Delivery time: 2-5 working days for South Africa
In stock - Ready for immediate dispatch
Free shipping for orders over R1,000.00
SIP MOS N 200V 9A 0,4R TO220

N-Channel 200 V MOSFET Transistor

Specifications

FET Type
N-Channel
Technology
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)
200 V
Current - Continuous Drain (Id) @ 25°C
9A (Tc)
Drive Voltage (Max Rds On, Min Rds On)
10V
Rds On (Max) @ Id, Vgs
400mOhm @ 4.5A, 10V
Vgs(th) (Max) @ Id
4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs
45 nC @ 10 V
Vgs (Max)
±20V
Input Capacitance (Ciss) (Max) @ Vds
700 pF @ 25 V
Power Dissipation (Max)
75W (Tc)
Operating Temperature
-65°C ~ 150°C (TJ)
Mounting Type
Through Hole
Supplier Device Package
TO-220

Additional Information

Device Transistor
Upgrade your electronics with the IRF630 N-Channel MOSFET Transistor. With a robust 200V, 9A capacity and low on-resistance of 400mOhm, it ensures efficient performance and reliability for your projects. Perfect for high-power applications, this versatile transistor operates at a wide temperature range, making it an ideal choice for both hobbyists and professionals. Enhance your circuit designs with the IRF630's superior power handling and efficiency.

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