IRFB23N15D

SKU: IRFB23N15D

BRAND: IOR


N-MOSFET 150V 23A 0.090Ω 136W TO220AB

150V 23A 0.090Ω 136W TO220AB

Specifications

Channel Type N
Maximum Continuous Drain Current 23 A
Maximum Drain Source Voltage 150 V
Package Type TO-220AB
Mounting Type Through Hole
Pin Count 3
Maximum Drain Source Resistance 90 mΩ
Channel Mode Enhancement
Maximum Gate Threshold Voltage 5.5V
Minimum Gate Threshold Voltage 3V
Maximum Power Dissipation 136 W
Transistor Configuration Single
Maximum Gate Source Voltage -30 V, +30 V
Number of Elements per Chip 1
Length 10.54mm
Maximum Operating Temperature +175 °C
Transistor Material Si
Typical Gate Charge @ Vgs 37 nC @ 10 V
Width 4.69mm
Minimum Operating Temperature -55 °C
Height 19.3mm
Series HEXFET

Downloads

Additional Information

Device Transistor
Discover the IRFB23N15D N-MOSFET, featuring a robust 150V and 23A capacity for high-performance applications. With a low on-resistance of just 0.090Ω and excellent thermal stability, this TO-220AB package ensures efficient power management and reliable operation. Upgrade your projects with this powerful transistor designed for optimal performance and longevity.