N-MOSFET 100V 120A (180A surge) 370W TO220 Rds = 3,7 - 4,5 mOhm
N-Channel MOSFET Power Transistor
Specifications
- Maximum Power Dissipation: 370 W
- Maximum Drain-Source Voltage: 100 V
- Maximum Gate-Source Voltage: 20 V
- Maximum Drain Current: 180 A
- Maximum Junction Temperature: 175 °C
Electrical Characteristics
- Maximum Gate-Threshold Voltage: 4 V
- Total Gate Charge: 150 nC
- Rise Time: 67 nS
- Output Capacitance: 670 pF
- Maximum Drain-Source On-State Resistance: 0.0045 Ohm
Additional Information
Unlock exceptional performance with the IRFB4110 N-MOSFET. Boasting a robust 100V, 120A capacity and ultra-low on-state resistance, this power transistor ensures high efficiency and reliability for your electronic projects. Ideal for demanding applications, it delivers superior power dissipation and rapid switching, making it a vital component for any high-performance circuit.