IRFB4110

SKU: IRFB4110

BRAND: Communica


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Delivery time: 2-5 working days for South Africa
In stock - Ready for immediate dispatch
Free shipping for orders over R1,000.00
N-MOSFET 100V 120A (180A surge) 370W TO220 Rds = 3,7 - 4,5 mOhm

N-Channel MOSFET Power Transistor

Specifications

  • Maximum Power Dissipation: 370 W
  • Maximum Drain-Source Voltage: 100 V
  • Maximum Gate-Source Voltage: 20 V
  • Maximum Drain Current: 180 A
  • Maximum Junction Temperature: 175 °C

Electrical Characteristics

  • Maximum Gate-Threshold Voltage: 4 V
  • Total Gate Charge: 150 nC
  • Rise Time: 67 nS
  • Output Capacitance: 670 pF
  • Maximum Drain-Source On-State Resistance: 0.0045 Ohm

Additional Information

Device Transistor
Unlock exceptional performance with the IRFB4110 N-MOSFET. Boasting a robust 100V, 120A capacity and ultra-low on-state resistance, this power transistor ensures high efficiency and reliability for your electronic projects. Ideal for demanding applications, it delivers superior power dissipation and rapid switching, making it a vital component for any high-performance circuit.

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