IRFD120

SKU: IRFD120

BRAND: Communica


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Delivery time: 2-5 working days for South Africa
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Single N Channel HEXFET 1,3A 100V HEX-DIP

Single N Channel HEXFET

Specifications

FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 100 V
Current - Continuous Drain (Id) @ 25°C 1.3 A (Ta)
Drive Voltage (Max Rds On, Min Rds On) 10 V
Rds On (Max) @ Id, Vgs 270 mΩ @ 780 mA, 10 V
Vgs(th) (Max) @ Id 4 V @ 250 µA
Gate Charge (Qg) (Max) @ Vgs 16 nC @ 10 V
Vgs (Max) ±20 V
Input Capacitance (Ciss) (Max) @ Vds 360 pF @ 25 V
Power Dissipation (Max) 1.3 W (Ta)
Operating Temperature -55°C to 175°C (TJ)
Mounting Type Through Hole
Supplier Device Package 4-HVMDIP
Package / Case 4-DIP (0.300", 7.62 mm)

Additional Information

Device HEXFET

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