N 60V 50V 150MA 60/1000 TO92 Silicon NPN Epitaxial Planar Transistor
Silicon NPN Epitaxial Planar Transistor
Specifications
- Package: TO-92, 1-emitter, 2-base, 3-collector.
- Material of transistor: Si
- Polarity: NPN
- Total Devise power dissipation |PD|: 625 mW(at ambient temperature ≤ + 25 °)
- Collector-base breakdown voltage |VCBO|: 60V
- Collector-emitter breakdown voltage |VCEO|: 50V
- Emitter-base breakdown voltage |VEBO|: 5V
- Maximum collector current |Ic max|: 150mA
- Maximum junction temperature |Tj|: +150 °C
- Transition frequency (ft) : 60MHz(min.)
- Output Capacitance |Cob|:3,5pF
- Collector-emitter saturation voltage|VCE|:0,25V(IC=100mA,IB= 5mA).
- Forward current transfer ratio |hFE| : 60-1000,(IC=1mA,VCE=5V), 200-600(C9014C)
Additional Information
| CatGroup |
Transistor |
| Device |
Transistor |
Upgrade your electronic projects with the KTC9014C Silicon NPN Epitaxial Planar Transistor. With a robust 625mW power dissipation and a high transition frequency of 60MHz, this reliable component ensures optimal performance and efficiency for your circuits. Perfect for DIY enthusiasts and professionals alike, it delivers exceptional reliability and versatility in various applications.