P 150V 4A 20MN 50W TO220
P 150V 4A 20MN 50W TO220
Specifications
-
- Type: PNP
- Collector-Emitter Voltage, max: -150 V
- Collector-Base Voltage, max: -150 V
- Emitter-Base Voltage, max: -5 V
- Collector Current − Continuous, max: -8 A
- Collector Dissipation: 50 W
- DC Current Gain (hfe): 40
- Transition Frequency, min: 30 MHz
- Operating and Storage Junction Temperature Range: -65 to +150 °C
- Package: TO-220
Additional Information
| Frequency Response |
30MHz |
| Import Data |
SI-P 150V 8A 50W 30MHz |
| Keywords |
BJT |
| Device |
Transistor |
| Type |
Bipolar Junction |
Discover the MJE15031 PNP transistor, designed for superior performance with a maximum collector-emitter voltage of 150V and a power dissipation of 50W. This reliable bipolar junction transistor ensures efficient operation with a high DC current gain and excellent frequency response up to 30MHz, making it ideal for your electronic projects. Upgrade your circuits with the MJE15031 for unmatched reliability and performance.