P 300V 300V 500MA 30MN TO126
P 300V 300V 500MA 30MN TO126
Specifications
-
- Type: PNP
- Collector-Emitter Voltage, max: -300 V
- Collector-Base Voltage, max: -300 V
- Emitter-Base Voltage, max: -5 V
- Collector Current − Continuous, max: -0.5 A
- Collector Dissipation: 20 W
- DC Current Gain (hfe): 30 to 240
- Operating and Storage Junction Temperature Range: -65 to +150 °C
- Package: TO-126
Additional Information
| CatGroup |
Transistor |
| Import Data |
SI-P 300V 0.5A 20W VIDPOW |
| Keywords |
BJT |
| Device |
Transistor |
| Type |
Bipolar Junction |
Discover the MJE350 PNP Transistor, designed for high-performance applications with a collector-emitter voltage of 300V and maximum current of 0.5A. This reliable bipolar junction transistor ensures efficient power management and durability, withstanding temperatures from -65 to +150°C. Upgrade your electronics with the MJE350 for enhanced reliability and performance.