Silicon NPN Transistor
Silicon NPN Transistor
Specifications
- Material of Transistor: Si
- Polarity: NPN
- Maximum Collector Power Dissipation (Pc): 1 W
- Maximum Collector-Base Voltage |Vcb|: 180 V
- Maximum Collector-Emitter Voltage |Vce|: 180 V
- Maximum Emitter-Base Voltage |Veb|: 8 V
- Maximum Collector Current |Ic max|: 0.4 A
- Max. Operating Junction Temperature (Tj): 200 °C
Electrical Characteristics
- Transition Frequency (ft): 50 MHz
- Collector Capacitance (Cc): 3 pF
- Forward Current Transfer Ratio (hFE), MIN: 30
- Package: TO39
Additional Information
Upgrade your electronics with the MM3009 Silicon NPN Transistor, designed for high performance and reliability. With a maximum collector power dissipation of 1W and collector-emitter voltage of 180V, this transistor ensures efficient operation in your circuits. Ideal for both hobbyists and professionals, it delivers a strong forward current transfer ratio, making it perfect for a variety of applications.