Silicon Planar Epitaxial PNP General-Purpose Transistor
Silicon PNP General-Purpose Transistor
Specifications
- Material of Transistor: Si
- Polarity: PNP
- Maximum Collector Power Dissipation (Pc): 0.625 W
- Maximum Collector-Base Voltage |Vcb|: 40 V
- Maximum Collector-Emitter Voltage |Vce|: 25 V
- Maximum Emitter-Base Voltage |Veb|: 5 V
- Maximum Collector Current |Ic max|: 0.2 A
- Max. Operating Junction Temperature (Tj): 150 °C
Electrical Characteristics
- Transition Frequency (ft): 100 MHz
- Collector Capacitance (Cc): 12 pF
- Forward Current Transfer Ratio (hFE), MIN: 60
- Package: TO92
Additional Information
| CatGroup |
Transistor |
| Device |
Transistor |
Upgrade your projects with the MPS3702 Silicon PNP Transistor, designed for optimal performance and reliability. With a maximum collector current of 0.2 A and a transition frequency of 100 MHz, this general-purpose transistor ensures efficient power dissipation and stability in your electronic circuits. Perfect for hobbyists and professionals alike, it delivers superior functionality in a compact TO92 package.