N 50V 30V 600MA 100MN TO92 Bipolar (BJT) NPN Transistor
Bipolar (BJT) NPN Transistor
Specifications
- Material of Transistor: Si
- Polarity: NPN
- Maximum Collector Power Dissipation (Pc): 0.625 W
- Maximum Collector-Base Voltage |Vcb|: 50 V
- Maximum Collector-Emitter Voltage |Vce|: 30 V
- Maximum Emitter-Base Voltage |Veb|: 5 V
- Maximum Collector Current |Ic max|: 0.8 A
- Max. Operating Junction Temperature (Tj): 150 °C
Electrical Characteristics
- Transition Frequency (ft): 100 MHz
- Collector Capacitance (Cc): 12 pF
- Forward Current Transfer Ratio (hFE), MIN: 300
- Package: TO92
Additional Information
Elevate your electronics projects with the MPS3704 NPN Bipolar Transistor. With a maximum collector current of 0.8 A and high efficiency at 100 MHz, this reliable TO92 package transistor ensures optimal performance and durability. Perfect for hobbyists and professionals alike, it’s designed to handle demanding applications with ease.