60V 500mA General-Purpose PNP Silicon Transistor
PNP Silicon Transistor
Specifications
- Material of Transistor: Si
- Polarity: PNP
- Maximum Collector Power Dissipation (Pc): 0.33 W
- Maximum Collector-Base Voltage |Vcb|: 60 V
- Maximum Collector-Emitter Voltage |Vce|: 60 V
- Maximum Emitter-Base Voltage |Veb|: 4 V
- Maximum Collector Current |Ic max|: 0.5 A
- Max. Operating Junction Temperature (Tj): 150 °C
Electrical Characteristics
- Transition Frequency (ft): 100 MHz
- Forward Current Transfer Ratio (hFE), MIN: 50
- Package: TO92
Additional Information
Upgrade your projects with the MPSA55 PNP Silicon Transistor, featuring a robust 60V rating and 500mA collector current. Ideal for general-purpose applications, this high-performance transistor ensures reliability and efficiency, making it the perfect choice for hobbyists and professionals alike. Experience superior performance with a maximum junction temperature of 150°C and a transition frequency of 100 MHz.