N 60V 40V 800MA 50/300 X17 NPN Silicon Power Bipolar Junction Transistor
NPN Silicon Power Bipolar Junction Transistor
Specifications
- Material of Transistor: Si
- Polarity: NPN
- Maximum Collector Power Dissipation (Pc): 10 W
- Maximum Collector-Base Voltage |Vcb|: 60 V
- Maximum Collector-Emitter Voltage |Vce|: 40 V
- Maximum Emitter-Base Voltage |Veb|: 5 V
- Maximum Collector Current |Ic max|: 0.8 A
- Max. Operating Junction Temperature (Tj): 150 °C
Electrical Characteristics
- Transition Frequency (ft): 100 MHz
- Collector Capacitance (Cc): 20 pF
- Forward Current Transfer Ratio (hFE), MIN: 50
- Package: X17
Additional Information
Optimize your electronics with the MPSU02 NPN Silicon Power Bipolar Junction Transistor. With a maximum collector power dissipation of 10W and a robust operating temperature of 150°C, this reliable transistor ensures efficient performance for your projects. Experience superior reliability and electrical characteristics, including a transition frequency of 100 MHz, making it ideal for high-frequency applications. Elevate your circuit designs with the trusted power of MPSU02.