N 140V 80V 1A 100MN NPN Transistor (TO-39 Metal Can)
80V 1A 100MN NPN Transistor
Features
A medium-voltage, medium-current transistor used for:
- Signal amplification
- Driver stages
- RF/IF circuits
- Switching up to 1 A
- Oscillators and control electronics
- Faster than many basic power transistors due to ~100 MHz ft.
Typical applications
- Audio driver stages
- RF amplifiers
- Small power switching
- Control circuits
- Instrumentation
- Vintage telecom or military boards
Specifications
- Polarity: NPN
- Collector-Emitter voltage (Vceo): 80 V
- Collector-Base voltage (Vcbo): 140 V
- Emitter-Base voltage (Vebo): ≈6 V
- Collector current (Ic max): 1 A
- Power dissipation: ≈800 mW – 1 W (depending on heatsinking)
- Gain (hFE): typically 30–150
- Transition frequency (ft): ~100 MHz
- Package: TO-39 metal can
- Operating temp: up to ~150 °C
Additional Information
| Device |
Transistor |
| Type |
80V | 1A | 100MN | NPN |
Unlock superior performance with the 2N3019 NPN Transistor, designed for efficient signal amplification and switching applications. With a robust 80V, 1A capacity and a transition frequency of ~100 MHz, this versatile component excels in RF amplifiers, audio drivers, and control circuits. Ideal for vintage telecom projects, it ensures reliability and high-speed operation in any setup. Upgrade your electronics with the 2N3019 and experience unmatched quality and performance.