P 35V 5A 10W 170MHz
Specifications
- Type: PNP
- Collector-Emitter Voltage, max: -20 V
- Collector-Base Voltage, max: -35 V
- Emitter-Base Voltage, max: -8 V
- Collector Current − Continuous, max: -5 A
- Collector Dissipation: 10 W
- DC Current Gain (hfe): 100 to 320
- Transition Frequency, min: 170 MHz
- Operating and Storage Junction Temperature Range: -55 to +150 °C
- Package: TO-126F
Additional Information
| CatGroup |
Transistor |
| Frequency Response |
170MHz |
| Import Data |
SI-P 35V 5A 10W 170MHz |
| Keywords |
BJT |
| Device |
Transistor |
| Type |
Bipolar Junction |
| Polarity |
PNP |
| Material |
Silicon |
| Power Dissipation |
10A |
Discover the power of the 2SA1357 PNP transistor, designed for high-efficiency performance with a 170MHz frequency response. With a robust 5A current capacity and 10W power dissipation, this silicon bipolar junction transistor ensures reliable operation across temperatures from -55°C to +150°C. Elevate your electronic projects with this versatile component, perfect for both hobbyists and professionals seeking quality and performance.