P 100V 20A DARLGTN 100W TO3P
P 100V 20A DARLGTN 100W TO3P
Specifications
- Polarity : PNP Darlington
- Package : TO‑3P
- Max Collector‑Base Voltage (VCBO) : –100 V
- Max Collector‑Emitter Voltage (VCEO) –80 V (Hitachi); sustaining –100 V (ISC)
- Max Emitter‑Base Voltage (VEBO) : –5 V
- Max Collector Current (IC) : –20 A
- Max Collector Power Dissipation (Pc) : 100 W
- DC Current Gain (hFE) : ≥ 1 000 @ IC = –10 A
- hFE Max : ~20 k (source: LittleDiode)
- Max Junction Temperature (Tj) : 175 °C
Additional Information
Discover the power of the 2SB1079 PNP Darlington Transistor, designed for high-performance applications with a max collector current of 20A and 100W power dissipation. Its robust specifications ensure reliability in demanding environments, making it the perfect choice for electronics enthusiasts and professionals. Upgrade your projects with this reliable component for superior efficiency and durability.