Silicon PNP Transistor
Silicon PNP Transistor
Specifications
- Maximum Collector Power Dissipation (Pc): 40 W
- Maximum Collector-Base Voltage |Vcb|: 100 V
- Maximum Collector-Emitter Voltage |Vce|: 80 V
- Maximum Emitter-Base Voltage |Veb|: 5 V
- Maximum Collector Current |Ic max|: 4 A
- Max. Operating Junction Temperature (Tj): 150 °C
Electrical Characteristics
- Transition Frequency (ft): 9 MHz
- Collector Capacitance (Cc): 110 pF
- Forward Current Transfer Ratio (hFE), MIN: 100
Additional Information
Upgrade your projects with the 2SB703 Silicon PNP Transistor, designed for high performance with a collector power dissipation of 40W and a maximum collector current of 4A. With a transition frequency of 9MHz, this reliable transistor ensures efficient signal processing and durability, making it an essential component for your electronic designs. Enhance your circuits with the power and reliability of the 2SB703 today!