N 80V 80V 4A 40MN TOP66 Transistor
Transistor Silicon NPN
Specifications
- Material of Transistor: Si
- Polarity: NPN
- Maximum Collector Power Dissipation (Pc): 40 W
- Maximum Collector-Base Voltage |Vcb|: 80 V
- Maximum Collector-Emitter Voltage |Vce|: 80 V
- Maximum Emitter-Base Voltage |Veb|: 5 V
- Maximum Collector Current |Ic max|: 4 A
- Max. Operating Junction Temperature (Tj): 150 °C
Electrical Characteristics
- Transition Frequency (ft): 3 MHz
- Forward Current Transfer Ratio (hFE), MIN: 40
- Package: TO220
Additional Information
Unlock your electronic projects' potential with the BD537 NPN Transistor. Designed for high performance, it offers 80V voltage and 4A current capacity, ensuring reliable power handling and efficiency. Perfect for amplifying signals and controlling circuits, this robust silicon transistor is essential for any DIY enthusiast or professional engineer. Upgrade your toolkit with the BD537 and experience superior reliability and versatility.