SI-N+D 1500V 8A 125W 0.7us High Voltage Fastswitching NPN Power Transistor
NPN Power Transistor
Specifications
- Material of Transistor: Si
- Polarity: NPN
- Maximum Collector Power Dissipation (Pc): 125 W
- Maximum Collector-Base Voltage |Vcb|: 1500 V
- Maximum Collector-Emitter Voltage |Vce|: 700 V
- Maximum Collector Current |Ic max|: 8 A
- Max. Operating Junction Temperature (Tj): 150 °C
Electrical Characteristics
- Transition Frequency (ft): 3 MHz
- Collector Capacitance (Cc): 125 pF
- Forward Current Transfer Ratio (hFE), MIN: 5
- Package: ISOWATT218
Additional Information
| Device |
Transistor |
| Type |
Bipolar Junction |
Unlock high performance with the BU508D NPN Power Transistor. Designed for efficiency, it delivers 125W of power and handles up to 1500V, making it ideal for demanding applications. Optimize your circuitry with its rapid switching speed and robust reliability. Perfect for engineers seeking durability and precision in high-voltage environments.