SI-N+D 1500V 8A 34W 0.7us Silicon Diffused Power Transistor
Silicon Diffused Power Transistor
Specifications
- Material of Transistor: Si
- Polarity: NPN
- Maximum Collector Power Dissipation (Pc): 34 W
- Maximum Collector-Base Voltage |Vcb|: 1500 V
- Maximum Collector-Emitter Voltage |Vce|: 700 V
- Maximum Collector Current |Ic max|: 8 A
- Max. Operating Junction Temperature (Tj): 150 °C
Electrical Characteristics
- Transition Frequency (ft): 7 MHz
- Collector Capacitance (Cc): 125 pF
- Forward Current Transfer Ratio (hFE), MIN: 10
- Package: ISOTOP3
Additional Information
Enhance your electronics projects with the BU508DF Silicon Diffused Power Transistor. With a robust 34W power dissipation, 1500V collector-base voltage, and a high current capacity of 8A, this NPN transistor ensures reliable performance and efficiency. Perfect for high-voltage applications, it delivers exceptional durability and stability, making it an essential component for any serious electronics enthusiast.