BUR52

SKU: BUR52

BRAND: Communica


🚚
Delivery time: 2-5 working days for South Africa
In stock - Ready for immediate dispatch
Free shipping for orders over R1,000.00
N 250V 250V 60A 10MN TO3

Transistor Silicon NPN

Specifications

Case TO3
Vbr CBO 350
Vbr CEO 250
Max. PD (W) 350
t(f) Max. (S) .60u
Max. hFE 100
Min hFE 20
Ic Max. (A) 60
@Ic (test) (A) 5.0
Icbo Max. @Vcb Max. (A) .20m
Polarity NPN
Tr Max. (s) 1.0u
Derate Above 25°C 2.0
Trans. Freq (Hz) Min. 16M
Oper. Temp (°C) Max. 175
@VCE (V) 4.0
Pinout Equivalence Number 3-14
Surface Mounted Yes/No NO
Maximum Collector Power Dissipation (Pc) 350 W
Maximum Collector-Base Voltage |Vcb| 350 V
Maximum Collector-Emitter Voltage |Vce| 250 V
Maximum Emitter-Base Voltage |Veb| 10 V
Maximum Collector Current |Ic max| 60 A
Max. Operating Junction Temperature (Tj) 200 °C
Transition Frequency (ft): 10 MHz
Forward Current Transfer Ratio (hFE), MIN 20

Additional Information

Device Transistor
Discover the BUR52 NPN transistor, designed for high-performance applications with a maximum collector current of 60A and a power dissipation of 350W. Its robust specifications ensure reliable operation up to 175°C, making it ideal for demanding environments. Upgrade your projects with this versatile and efficient transistor, perfect for enhancing your electronic designs.

Customer Reviews

Be the first to write a review
0%
(0)
0%
(0)
0%
(0)
0%
(0)
0%
(0)