N 450V 1000V 2A SOT82 Transistor
Silicon NPN Power Transistor
Specifications
- Maximum Collector Power Dissipation (Pc): 62 W
- Maximum Collector-Base Voltage |Vcb|: 150 V
- Maximum Collector-Emitter Voltage |Vce|: 120 V
- Maximum Emitter-Base Voltage |Veb|: 6 V
- Maximum Collector Current |Ic max|: 10 A
- Max. Operating Junction Temperature (Tj): 175 °C
Electrical Characteristics
- Transition Frequency (ft): 30 MHz
- Forward Current Transfer Ratio (hFE), MIN: 30
Additional Information
Discover the BUW86 NPN Power Transistor, designed for high efficiency with a maximum collector power dissipation of 62W and robust performance at 2A. Ideal for your electronics projects, it offers reliable operation up to 175°C, making it perfect for demanding applications. Enhance your designs with this powerful and versatile transistor today!