IRF620

SKU: IRF620

BRAND: Communica


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Delivery time: 2-5 working days for South Africa
In stock - Ready for immediate dispatch
Free shipping for orders over R1,000.00
SIP MOS N-Channel 200V 5A 0,8R TO220

SIP MOS N 200V 5A 0,8R TO220

Specifications

FET Type
N-Channel
Technology
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)
200 V
Current - Continuous Drain (Id) @ 25°C
5.2A (Tc)
Drive Voltage (Max Rds On, Min Rds On)
10V
Rds On (Max) @ Id, Vgs
800mOhm @ 3.1A, 10V
Vgs(th) (Max) @ Id
4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs
14 nC @ 10 V
Vgs (Max)
±20V
Input Capacitance (Ciss) (Max) @ Vds
260 pF @ 25 V
Power Dissipation (Max)
50W (Tc)
Operating Temperature
-65°C ~ 150°C (TJ)
Mounting Type
Through Hole
Supplier Device Package
TO-220AB
Package / Case
TO-220-3

Additional Information

CatGroup Field Effect Transistor
Unlock powerful performance with the IRF620 N-Channel MOSFET. With a 200V drain-to-source voltage and 5A continuous current capability, this reliable transistor ensures efficient power management for your electronic projects. Its low on-resistance and high power dissipation make it perfect for demanding applications, providing durability and optimal functionality. Upgrade your circuits with the IRF620 and experience superior reliability today!

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